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 LTC5531 Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment
FEATURES
s s s s s s s s s
DESCRIPTIO
Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm Buffered Detector Output Precision VOUT Offset Control Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Low Shutdown Current: <2A Available in a Low Profile (1mm) SOT-23 Package
The LTC(R)5531 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown mode reduces current to less than 2A. The initial offset voltage of 120mV 35mV can be precisely adjusted using the VOS pin. The LTC5531 operates with input power levels from -32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information.
APPLICATIO S
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802.11a, 802.11b, 802.11g, 802.15, 802.16 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector
TYPICAL APPLICATIO
VOUT Output Voltage vs RF Input Power 300MHz to 7GHz RF Power Detector
33pF RF INPUT 1 VOUT OUTPUT VOLTAGE (mV) LTC5531 VCC 6 RFIN 100pF 2 GND VOUT 5
3600
VOS = 0V 3200 VCC = 3.6V TA = 25C 2800 2400 2000 1600 1200 800 400
VCC 0.1F
DISABLE ENABLE
3
SHDN
4 VOS VOS REFERENCE
5531 TA01
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
U
2000MHz 1000MHz 4000MHz 3000MHz 300MHz 5000MHz 6000MHz 7000MHz 6 10
5531 TA02
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U
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1
LTC5531
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW RFIN 1 GND 2 SHDN 3 6 VCC 5 VOUT 4 VOS
VCC, VOUT, SHDN, VOS .................................... -0.3V to 6.5V RFIN Voltage ......................................(VCC 1.5V) to 7V RFIN Power (RMS) .............................................. 12dBm IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC5531ES6 S6 PART MARKING LTBBQ
S6 PACKAGE 6-LEAD PLASTIC TSOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, VOS = 0V and SHDN = HI unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Operating Current IVCC Shutdown Current VOUT (No RF Input) VOUT Output Current VOUT Enable Time VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise VOS Voltage Range VOS Input Current SHDN Voltage, Chip Disabled SHDN Voltage, Chip Enabled SHDN Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance VCC = 2.7V to 6V VCC = 2.7V to 6V SHDN = 3.6V (Note 8) RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm IVOUT = 0mA SHDN = LO RLOAD = 2k, VOS = 0V SHDN = LO VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k CLOAD = 33pF, RLOAD = 2k (Note 4) (Notes 6, 7) VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination
q q q q q q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q q q q q q
TYP 0.5 0.01
MAX 6 0.7 2 155
UNITS V mA A mV mV mA s MHz pF V/s mVP-P
2.7
85 2
100 to 140 1 4 8 2
20 33
3 1 0 -0.5 1.4 22 300 to 7000 -32 to 10 220 0.65 36 1 0.5 0.35
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. Note 7: Capacitive loading greater than this value may result in circuit instability. Note 8: Higher frequency operation is achievable with reduced performance. Consult factory for more information.
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V A V V A MHz dBm pF
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LTC5531 TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Output Voltage vs VCC Supply Voltage (RF Input Signal Off)
135 VOS = 0V 520
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (A)
130
TA = 85C
125
TA = 25C
120
TA = -40C
115 2.5
3.0
3.5
4.0 4.5 5.0 SUPPLY VOLTAGE (V)
VOUT vs RF Input Power and VOS, fRF = 1000MHz
3600 VCC = 3.6V 3200 TA = 25C VOUT OUTPUT VOLTAGE (mV) 2800 2400 2000 1600 1200 800 400 VOS = 1V VOS = 0.5V VOS = 0.2V VOS = 0V 4 8 5600 4800
VOUT OUTPUT VOLTAGE (mV)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 300MHz
3600 3200 VOS = 0V VCC = 3.6V
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 RF INPUT POWER (dBm)
5531 G06
UW
5.5
ICC Power Supply Current vs VCC Supply Voltage (RF Input Signal Off)
VOS = 0V 3600 TA = -40C TA = 25C 480 TA = 85C
VOUT vs RF Input Power and VOS, fRF = 300MHz
VCC = 3.6V 3200 TA = 25C 2800 2400 2000 1600 1200 800 400 VOS = 1V VOS = 0.5V
500
460
440
6.0
420 2.5
3.0
3.5
4.0 4.5 5.0 SUPPLY VOLTAGE (V)
5.5
6.0
VOS = 0.2V VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5531 G01
5531 G02
5531 G03
VOUT vs RF Input Power and VCC Supply Voltage, fRF = 1000MHz
VOS = 0V TA = 25C
4000 3200 2400 1600 800 0 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 12
5531 G05
VCC = 6V VCC = 5V VCC = 4V VCC = 3V
5531 G04
Typical Detector Characteristics, 1000MHz
3600 VOS = 0V 3200 VCC = 3.6V 2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C
TA = -40C
TA = -40C
TA = 25C
TA = 85C
0
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5531 G07
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LTC5531 TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics, 2000MHz
3600 VOS = 0V 3200 VCC = 3.6V
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
VOUT OUTPUT VOLTAGE (mV)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 5000MHz
3600 VOS = 0V 3200 VCC = 3.6V 3600
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400
VOUT OUTPUT VOLTAGE (mV)
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
Typical Detector Characteristics, 7000MHz
3600 VOS = 0V 3200 VCC = 3.6V 1000
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400
VOUT SLOPE (mV/dB)
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
4
UW
4
5531 G07
Typical Detector Characteristics, 3000MHz
3600 VOS = 0V 3200 VCC = 3.6V 3600
Typical Detector Characteristics, 4000MHz
VOS = 0V 3200 VCC = 3.6V 2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
8
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
6
10
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
6
10
5531 G09
5531 G10
Typical Detector Characteristics, 6000MHz
VOS = 0V 3200 VCC = 3.6V
TA = -40C
2800 2400 2000 1600 1200 800 400
TA = -40C
TA = 25C
TA = 25C
TA = 85C
TA = 85C
6
10
0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm)
6
10
5531 G11
5531 G12
VOUT Slope vs RF Input Power at 300MHz
TA = -40C
100
TA = 25C
TA = -40C 10 TA = 85C
TA = 85C 1 -30
TA = 25C 10 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G14
6
5531 G13
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LTC5531 TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power at 1000MHz
1000 VOS = 0V VCC = 3.6V 1000
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
100
VOUT SLOPE (mV/dB)
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G15
VOUT Slope vs RF Input Power at 4000MHz
1000 VOS = 0V VCC = 3.6V 1000
VOUT SLOPE (mV/dB)
100
VOUT SLOPE (mV/dB)
TA = -40C 10 TA = 85C
1 -30
-25
VOUT Slope vs RF Input Power at 6000MHz
1000 VOS = 0V VCC = 3.6V 1000
VOUT SLOPE (mV/dB)
100
VOUT SLOPE (mV/dB)
10
TA = -40C TA = 85C
1 -30
-25
UW
VOUT Slope vs RF Input Power at 2000MHz
VOS = 0V VCC = 3.6V 1000
VOUT Slope vs RF Input Power at 3000MHz
VOS = 0V VCC = 3.6V
100
TA = -40C 10 TA = 85C
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G16
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G17
VOUT Slope vs RF Input Power at 5000MHz
VOS = 0V VCC = 3.6V
100
TA = -40C 10
TA = 85C
TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G18
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G19
VOUT Slope vs RF Input Power at 7000MHz
VOS = 0V VCC = 3.6V
100
10
TA = -40C
TA = 85C
TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G20
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5531 G21
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LTC5531 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 290.45 234.41 178.25 137.31 109.17 86.30 68.65 57.48 49.79 43.56 38.67 34.82 31.68 29.13 27.17 25.73 24.56 23.18 22.31 20.73 19.88 19.40 19.05 19.08 19.55 20.85 21.94 20.60 19.29 18.69 18.53 18.74 19.79 19.75 19.99 REACTANCE () -136.22 -162.54 -170.53 -159.89 -147.57 -136.18 -121.74 -107.60 - 96.72 - 86.70 -77.91 -70.13 - 62.86 - 56.01 - 49.83 - 44.24 - 39.74 - 35.35 - 30.62 -26.88 -22.31 -18.23 -14.25 -10.21 - 6.30 - 2.84 -1.49 - 0.07 2.99 6.61 10.39 14.35 17.91 20.77 22.47
6
UW
S11 Forward Reflection Impedance
0.3000GHz-7.000GHz
5508 TA03
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LTC5531 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 216.45 190.63 161.98 133.17 113.08 94.55 75.33 63.52 55.19 48.64 43.73 39.71 36.47 33.69 31.61 29.78 28.27 26.63 26.12 24.20 23.28 22.60 22.21 22.15 22.61 23.90 24.97 23.51 22.25 21.57 21.43 21.69 22.68 22.81 23.07 REACTANCE () -76.47 -98.28 -112.03 -111.53 -109.05 -107.08 - 98.50 - 88.19 - 80.05 -72.23 - 64.81 - 58.31 - 52.27 - 46.77 - 41.25 -36.61 -32.39 -28.12 -23.97 -20.75 -16.69 -12.77 - 9.08 -5.24 -1.58 1.53 2.62 4.00 6.94 10.62 14.02 17.77 21.24 24.21 25.56
UW
S11 Forward Reflection Impedance
0.3000GHz-7.000GHz
5508 TA04
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LTC5531
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. SHDN (Pin 3): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 160k pulldown resistor to ensure that the part is in shutdown when no input is applied. In shutdown VOUT is connected to ground via a 280 resistor. VOS (Pin 4): VOUT Offset Voltage Adjustment. This pin adjusts the starting VOUT voltage when no RF signal is present. For VOS from 0V to 120mV, VOUT is unaffected by VOS. For VOS > 120mV, VOUT is the sum of VOS plus the detected RF signal. VOUT (Pin 5): Detector Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors.
BLOCK DIAGRA
RFSOURCE
RFIN
1 500 30k SD 31k 25pF 24k
GND 2
8
W
U
U
U
VCC 6 SD
+
BIAS 500 SHUTDOWN BUFFER 5 VOUT
-
30k 180 100
+
RF DET 80k SD
+ -
120mV
4
VOS
-
80k
50A
50A 160k
+
5531 BD
3 SHDN
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LTC5531
APPLICATIO S I FOR ATIO
Operation The LTC5531 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF input signal to DC and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5531 has both shutdown and voltage offset adjustment capabilities. Buffer Amplifier The output buffer amplifier is capable of supplying typically 4mA into a load. The amplifier has a bandwidth of 2MHz and a fixed internal gain of two. The VOS input controls the DC input voltage to the buffer amplifier. VOS must be connected to ground if the DC output voltage is not to be changed. The buffer is initially trimmed to approximately 120mV with VOS connected to ground. The VOS pin is used to change the initial VOUT starting voltage. This function enables the LTC5531 output to span
RFIN
C4 39pF 1 R1 (OPT) 22k 2 3
VCC SHDN
U
the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 120mV. The voltage at VOUT for VOS 120mV and with no RF signal present is: VOUT = VOS VOUT will exactly track VOS above 120mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor. Shutdown The part is in shutdown mode when SHDN is low. The supply current is reduced to < 2A and VOUT is shorted to ground via a 280 resistor. When SHDN is asserted high, the part is enabled after about 8s.
Demo Board Schematic
VCC 2.7V TO 6V LTC5531ES6 RFIN VCC 6 5 4 VOS C2 100pF VOUT C3 (OPT) C1 0.1F GND VOUT SHDN VOS
5531 DB
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LTC5531
APPLICATIO S I FOR ATIO
Applications The LTC5531 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 300MHz to 7GHz. Operation at higher frequencies is achievable. Consult factory for more information. The LTC5531 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled
LTC5531ES6 1 2 3 DISABLE ENABLE RFIN VCC 6 5 4 OFFSET ADJUSTMENT
GND VOUT SHDN VOS
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
10
U
data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5531 can be used for RF power detection and control. Figure 1 is an example of transmitter power control, using the LTC5531 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) forms a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5531 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna.
0.1F Li-Ion Tx PA MODULE CELL BAND DIPLEXER R1 200 1% C1 0.5pF 0.05pF PCS BAND MOBILE PHONE DSP VPC BSE
5532 F01
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LTC5531
PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
5531f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LTC5531
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5531f
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
q
LT/TP 0104 1K * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2004


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